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A KAIST research team developed a technology that makes a transition of the operation mode of flexible memristors to synaptic analog switching by reducing the size of the formed filament. Through this technology, memristors can extend their role to memristive synapses for neuromorphic chips, which will lead to developing soft neuromorphic intelligent systems.
Brain-inspired neuromorphic chips have been gaining a great deal of attention for reducing the power consumption and integrating data processing, compared to conventional semiconductor chips. Similarly, memristors are known to be the most suitable candidate for making a crossbar array which is the most efficient architecture for realizing hardware-based artificial neural network (ANN) inside a neuromorphic chip.
A hardware-based ANN consists of a neuron circuit and synapse elements, the connecting pieces. In the neuromorphic system, the synaptic weight, which represents the connection strength between neurons, should be stored and updated as the type of analog data at each synapse.
However, most memristors have digital characteristics suitable for nonvolatile memory. These characteristics put a limitation on the analog operation of the memristors, which makes it difficult to apply them to synaptic devices.
Professor Sung-Yool Choi from the School of Electrical Engineering and his team fabricated a flexible polymer memristor on a plastic substrate, and found that changing the size of the conductive metal filaments formed inside the device on the scale of metal atoms can make a transition of the memristor behavior from digital to analog.
Using this phenomenon, the team developed flexible memristor-based electronic synapses, which can continuously and linearly update synaptic weight, and operate under mechanical deformations such as bending.
The team confirmed that the ANN based on these memristor synapses can effectively classify person’s facial images even when they were damaged. This research demonstrated the possibility of a neuromorphic chip that can efficiently recognize faces, numbers, and objects.
Professor Choi said, “We found the principles underlying the transition from digital to analog operation of the memristors. I believe that this research paves the way for applying various memristors to either digital memory or electronic synapses, and will accelerate the development of a high-performing neuromorphic chip.”
In a joint research project with Professor Sung Gap Im (KAIST) and Professor V. P. Dravid (Northwestern University), this study was led by Dr. Byung Chul Jang (Samsung Electronics), Dr. Sungkyu Kim (Northwestern University) and Dr. Sang Yoon Yang (KAIST), and was published online in Nano Letters (10.1021/acs.nanolett.8b04023) on January 4, 2019.
Figure 1: a) Schematic illustration of a flexible pV3D3 memristor-based electronic synapse array. b) Cross-sectional TEM image of the flexible pV3D3 memristor